The hall effect — an important diagnostic tool

AbstractThe quantitative measurement of carrier concentrations and mobilities is of vital importance in the assessment of semiconductor materials. One of the best-established methods of doing this relies on the Hall effect, which was discovered as long ago as 1880 by E.H. Hall in his investigations of metals. This article introduces the basic theory of the Hall effect at a fairly elementary level, with a minimum of mathematics, and discusses how it can be used to determine semiconductor parameters. It does not attempt to cover the more advanced developments of the subject, such as the quantum Hall effect

Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.Comment: Minor revision to appear in Phys. Rev. B. Color figures available in the online PRB version or upon request to: [email protected]

Overcritical states of a superconductor strip in a magnetic environment

A current-carrying superconducting strip partly penetrated by magnetic flux and surrounded by a bulk magnet of high permeability is considered. Two types of samples are studied: those with critical current controlled by an edge barrier dominating over the pinning, and those with high pinning-mediated critical current masking the edge barrier.It is shown for both cases that the current distribution in a central flux-free part of the strip is strongly affected by the actual shape of the magnetic surroundings. Explicit analytical solutions for the sheet current and self-field distributions are obtained which show that, depending on the geometry, the effect may suppress the total loss-free transport current of the strip or enhance it by orders of magnitude. The effect depends strongly on the shape of the magnet and its distance to the superconductor but only weakly on the magnetic permeability.Comment: 20 pages, 20 figure

Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes

WOS: 000382221100014Mn-doped p-InSe semiconductor crystals were grown by Bridgman -Stockbarger technique. The crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fabricated Sn/InSe: Mn Schottky diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of diodes were investigated to determine the response of devices to electron irradiation with 9 MeV energy and 1.2x10(10) e-cm(-2) dose. After irradiation, the ideality factor and barrier height of the Sn/InSe: Mn Schottky diode were determined as 1.66 and 0.85 eV, respectively. Before irradiation, they were determined as 1.37 and 0.90 eV, respectively. It has been concluded that the radiation with high energy may contribute to form defects at the interface of the Sn/InSe:Mn device